Effect of copper pretreatment on optical and electrical properties of camphor-based graphene by chemical vapour deposition

Polycrystalline copper (Cu) foil is widely used as catalytic substrate for graphene growth in chemical vapor deposition (CVD) technique. The surface properties of the Cu strongly affect behavior and final quality CVD-grown graphene. effect pretreatment using four different solutions (acetone, acetic acid, HCl HNO3) on held atmospheric pressure CVD its subsequent impact electrical optical are investigated. Natural camphor solid carbon precursor. characteristics before after studied scanning electron microscopy atomic force microscopy. conditions from were correlated Raman spectroscopy, characteristics. Our findings suggest that HCl-pretreated exhibited large domain, uniform coverage transferred with excellent (> 93% at 550 nm) (sheet resistance 861 ± 40 Ω/sq), promisingly low RMS value roughness (38 nm). process improved by removing impurity particles native oxides. A Schottky junction diode graphene/n-silicon fabricated transferring to SiO2/Si under dark illuminated also demonstrated establish potential micro- opto-electronics.